Electronic Devices and Circuits I (English)

Unit 1. Introduction to Semiconductor Physics: Introduction, Energy band gap structures of semiconductors, Classifications of semiconductors, Degenerate and non-degenerate semiconductors,Direct and indirect band gap semiconductors, Electronic properties of Silicon, Germanium, Compound Semiconductor, Gallium Arsenide, Gallium phosphide & Silicon carbide, Variation of semiconductor conductivity, resistance and bandgap with temperature and doping. Thermistors, Sensitors.

Unit 2. Review of Quantum Mechanics, Electrons in periodic Lattices, E-k diagrams. Energy bands in intrinsic and extrinsic silicon; Carrier transport: diffusion current, drift current, mobility andresistivity; sheet resistance, design of resistors. 

Unit 3. Generation and recombination of carriers; Poisson and continuity equation P-N junction characteristics, I-V characteristics, and small signal switching models; Avalanche breakdown, Zenerdiode, Schottky diode.

Unit 4. Bipolar Junction Transistor, I-V characteristics, Ebers-Moll Model, MOS capacitor, C-V characteristics, MOSFET, I-V characteristics, and small signal models of MOS transistor, LED,photodiode and solar cell.